High I on/I off current ratio graphene field effect transistor: the role of line defect
نویسندگان
چکیده
The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices.
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